A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
نویسندگان
چکیده
In this paper we present a hydrodynamical model which describes hole motion in silicon. The model is based on the moment method and the closure of the system of moment equations is obtained by using the maximum entropy principle (hereafter MEP). The heavy, light and split-off valence bands are considered. The first two are described by taking into account their warped shape, while for the split-off band a parabolic approximation is used. Moreover the model is coupled with an analogous model for electrons, so obtaining a complete description of charge transport in silicon. Numerical simulations are performed both for bulk silicon and a p-n junction.
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ورودعنوان ژورنال:
- Mathematical and Computer Modelling
دوره 53 شماره
صفحات -
تاریخ انتشار 2011